Semiconductors > Transistors > Insulated Gate Bipolar Transistors

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Manufacturer DYNEX SEMICONDUCTOR FUJI INFINEON ON SEMICONDUCTOR ST MICROELECTRONICS VISHAY

Additional Feature HIGH RELIABILITY HIGH RELIABILITY, LOW CONDUCTION LOSS HIGH SWITCHING SPEED LOW CONDUCTION LOSS LOW SATURATION VOLTAGE ULTRA FAST ULTRA FAST SOFT ULTRA FAST SOFT RECOVERY VOLTAGE CLAMPING

Case Connection COLLECTOR ISOLATED

Configuration COMPLEX SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE SINGLE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE AND RESISTOR

Gate-emitter Voltage-Max 12 16 20 25 30

JEDEC-95 Code TO-220AB TO-247 TO-247AC TO-247AD TO-252 TO-252AA TO-263AB TO-274AA

JESD-609 Code e3 e6

Moisture Sensitivity Level 1 NOT APPLICABLE

Number of Elements 1 2 3 6

Number of Terminals 12 13 2 3 38 4 7 9

Operating Temperature-Max 125 150 175

Package Body Material PLASTIC/EPOXY UNSPECIFIED

Package Shape RECTANGULAR

Package Style FLANGE MOUNT IN-LINE SMALL OUTLINE

Peak Reflow Temperature (Cel) 225 245 250 260 NOT SPECIFIED

Polarity/Channel Type N-CHANNEL

Qualification Status Not Qualified

Sub Category Insulated Gate BIP Transistors

Surface Mount NO YES

Terminal Finish MATTE TIN Matte Tin (Sn) Matte Tin (Sn) - annealed Matte Tin (Sn) - with Nickel (Ni) barrier MATTE TIN OVER NICKEL Nickel (Ni) TIN Tin (Sn) Tin/Bismuth (Sn/Bi)

Terminal Form GULL WING THROUGH-HOLE UNSPECIFIED

Terminal Position DUAL SINGLE UPPER

Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED

Transistor Application AUTOMOTIVE IGNITION GENERAL PURPOSE SWITCHING MOTOR CONTROL POWER CONTROL

Transistor Element Material SILICON

VCEsat-Max 1.5 1.6 2.2 2.5 2.6 3.2 3.65

Part Number	Description	In Stock
STGW40H65DFB Mfr: st microelectronics	HB Series 650 V 80 A High Speed Trench Gate Field-Stop IGBT - TO-247	0
STGW40H65DFB Mfr: st microelectronics	HB Series 650 V 80 A High Speed Trench Gate Field-Stop IGBT - TO-247	0
STGW40H65DFB Mfr: st microelectronics	TO-247/Trench gate field-stop IGBT, HB series 650 V, 40 A high speed	0
STGW40H65FB Mfr: st microelectronics	HB Series 650 V 80 A High Speed Trench Gate Field-Stop IGBT - TO-247	0
STGW60H65DFB Mfr: st microelectronics	STGW Series Advanced Trench Gate Field Stop Through Hole IGBT - TO-247-3	0
STGWA15H120DF2 Mfr: st microelectronics	Insulated Gate Bipolar Transistor, 30AI(C),1200VV(BR)CES, N-Channel	0
STGWA15H120F2 Mfr: st microelectronics	Insulated Gate Bipolar Transistor	0
STGWA15M120DF3 Mfr: st microelectronics	Insulated Gate Bipolar Transistor	0
STGWA25H120DF2 Mfr: st microelectronics	Insulated Gate Bipolar Transistor	0
STGWA25H120F2 Mfr: st microelectronics	Insulated Gate Bipolar Transistor, 50AI(C),1200VV(BR)CES, N-Channel	0
STGWA25M120DF3 Mfr: st microelectronics	Insulated Gate Bipolar Transistor, 50AI(C),1200VV(BR)CES, N-Channel	0
STGWA30H65FB Mfr: st microelectronics		0
STGWA30M65DF2 Mfr: st microelectronics		0
STGWA40H120DF2 Mfr: st microelectronics	1200V, 40A, 2.1VCE, TO-247 LONG LEADS, IGBT	0
STGWA40H120F2 Mfr: st microelectronics	Insulated Gate Bipolar Transistor	0
STGWA40M120DF3 Mfr: st microelectronics	Insulated Gate Bipolar Transistor, 80AI(C),1200VV(BR)CES, N-Channel	0
STGWA40M120DF3 Mfr: st microelectronics	TO-247/Trench gate field-stop IGBT, M series 1200 V, 40 A low loss	0
STGWA60H65DFB Mfr: st microelectronics	Insulated Gate Bipolar Transistor	0
STGWA60V60DF Mfr: st microelectronics	Insulated Gate Bipolar Transistor	0
STGWA80H65DFB Mfr: st microelectronics	Insulated Gate Bipolar Transistor	0
STGWA80H65FB Mfr: st microelectronics	Insulated Gate Bipolar Transistor, 120AI(C),650VV(BR)CES, N-Channel	0
STGWT30H60DFB Mfr: st microelectronics	HB Series 600 V 30 A Flange Mount Trench Gate Field-Stop IGBT - TO-3P	0
STGWT30H65FB Mfr: st microelectronics	HB Series 650 V 30 A High Speed Trench Gate Field-Stop IGBT - TO-3P	0
STGWT40H65FB Mfr: st microelectronics	HB Series 650 V 80 A High Speed Trench Gate Field-Stop IGBT - TO-3P	0
STGYA120M65DF2AG Mfr: st microelectronics	TO247PLUS/Trench gate field-stop IGBT, M series 650V, 120A Low Loss	0